3 edition of Autonomous magnetic float zone microgravity crystal growth application to TiC and GaAs found in the catalog.
Autonomous magnetic float zone microgravity crystal growth application to TiC and GaAs
by Scientific Research Associates, Inc., National Technical Information Service, distributor in Glastonbury, Conn, [Springfield, Va
Written in English
|Statement||prepared by: Tony Y-T. Chan and Sang-Keun choi.|
|Series||[NASA contractor report] -- NASA CR-192417., NASA contractor report -- NASA CR-192417.|
|Contributions||United States. National Aeronautics and Space Administration.|
|The Physical Object|
The GaAs doped with donors manifests long times of spin relaxation, while in the case of acceptors (or magnetic impurities) spin relaxation rate increases markedly, in accordance with theoretical predictions. From the practical point of view, this situation is unfavorable, since the devices based on spin degrees of freedom require long times of the spin : Ilya A. Akimov, G.V. Astakhov, R.I. Dzhioev, K.V. Kavokin, V.I. Korenev, Y.G. Kusrayev, D.R. Yakovle. North Carolina State University. (, September 10). New magnetic semiconductor material holds promise for 'spintronics'. ScienceDaily. Retrieved Febru from
Miloš Beković and Anton Hamler (February 24th ). Experimental System for Determining the Magnetic Losses of Super Paramagnetic Materials; Planning, Realization and Testing, Applied Measurement Systems, Md. Zahurul Haq, IntechOpen, DOI: / Available from:Cited by: 2. dependent on GIC magnitude. However, when the geoelectric field is calculated from magnetic field data (dB/dt), and the earth model is not laterally uniform, the frequency content of the dB/dt waveform can have a significant effect on the induced geoelectric field . Steady-State SimulationsFile Size: KB.
Magnetic charge crystals imaged in artificial spin ice 2 September A team of scientists has reported direct visualization of magnetic charge crystallization in an artificial spin ice material, a first in the study of a relatively new class of frustrated artificial magnetic materials-by-design known as “Artificial Spin Ice.”. magnetic energy of an atom and its effective magnetic mo-ment vary with the strength of the external magnetic field. These changes occur because the atomic configuration varies from the electron angular momentum being primarily coupled to the nucleus at a low external field to being principally coupled to the external magnetic field at a high File Size: KB.
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Get this from a library. Autonomous magnetic float zone microgravity crystal growth application to TiC and GaAs. [Tony Y-T Chan; United States.
National Aeronautics and Space Administration.]. Tegetmeier, G. Nagel and K.W. Benz, Floating-zone growth of GaAs under microgravity during the D2-mission, Technol., 29, () Cr6ll A., et al., Floating-zone and Floating-Solution-Zone growth of GaSb under microgravity, J.
Crystal Growth in print () Herrmann R.M. and G. Muller, Growth of 20mm diameter GaAs crystals by the Cited by: 2. The magnetic damping effect of the non-uniform magnetic field on the floating-zone crystal growth process in microgravity is studied by numerical simulation.
The results show that the non-uniform magnetic field with designed configuration can effectively reduce the flow near the free surface and then in the melt zone. At the same time, the designed magnetic field can improve the impurity Cited by: 3. The experimental conception of the floating zone (FZ) technique for the growth of GaAs crystals with larger diameters under microgravity, including th Cited by: MODELS OF MASS TRANSPORT DURING MICROGRAVITY CRYSTAL GROWTH OF ALLOYED SEMICONDUCTORS IN A MAGNETIC FIELD Nancy Ma* North Carolina State University, Raleigh, NC, USA Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals, are extremely important for optoelectronic devices.
global model. The main parameters of this system are the magnetic Taylor number 2 4 2 Ta =Beff (H/2) ωσρ/2ηand the aspect ratio H/R of the molten zone, where ω is the magnetic field frequency, and σ, ρ, η are the electrical conductivity, density, and dynamic viscosity of the melt, respectively.
H is the height and R the radius of the melt. Five GaAs single crystals Si-doped and undoped with diameters of 20 mm were grown by the floating-zone-technique (FZ) under microgravity during the second German Spacelab Mission D2.
The GaAs rods were sealed in silica ampoules which contained and integrated As-source to provide controlled stoichiometry : G. Müller, F. Herrmann. One of the prerequisites for a high-quality VGF-grown single crystal of GaAs is a slightly convex shape of the solid-liquid (s/l) interface.
Lorentz forces induced by travelling magnetic fields. Transverse rotating magnetic fields (Bmax= mT, frot=50 Hz) were applied to the floating zone growth of doped silicon.
Non-periodic dopant fluctuations caused by time-dependent thermocapillary. where = Z i C () () −1 cap ω ω is the capacitor impedance, coil () = + ω ω Z R i L is the impedance of the empty coil and Z sample ω ρ a(,) is that part of the coil impedance resulting from the inductively coupled sample.
By a measurement of I 0, U 0, ϕ, and ω, real and imaginary part of the complex sample impedance Z a(,) sample ω ρ, depending on the sample properties.
Hello I am currently researching on crystals and how their growth rate is affected by magnetic fields for my upcoming lab. Most of the information is based on labs but I quite don't understand what they speak of.
So I was wondering if anyone here has any nice reading material on crystals and. Consensus Study Report: Consensus Study Reports published by the National Academies of Sciences, Engineering, and Medicine document the evidence-based consensus on the study’s statement of task by an authoring committee of s typically include findings, conclusions, and recommendations based on information gathered by the committee and the committee’s deliberations.
Si and GaAs crystal planes in a broad angle range. The energetic balance between GaAs and Si is unfa-vourable for growth of GaAs on Si substrate. Minima of the surface energy correspond to GaAs/Si het-erostructure interface energy minima which indicate preferable crystal orientations for.
GaAs, like silicon, is a well-known semiconductor commonly used in high-speed electronic devices and laser diodes. When manganese (Mn) atoms are doped into a. Department of Physics, State Key Laboratory of Surface Physics, and Advanced Materials Laboratory, Fudan University, ShanghaiPeople’s Republic of China a) Author to whom correspondence should be addressed.
Electronic mail: [email protected].Cited by: GaAs, like silicon, is a well-known semiconductor commonly used in high-speed electronic devices and laser diodes. When manganese (Mn) atoms are doped into a GaAs crystal ((Ga,Mn)As), the crystal exhibits characteristics and properties of both the semiconductor and magnet (Fig.
For damping residual, unsteady flows in semiconductor melts a space‐compatible multizone furnace including a magnetic damping array consisting of two radially magnetized permanent magnet rings has Cited by: 5. As a preliminary experiment for the growth of InGaSb alloy crystals under microgravity at International Space Station (ISS), bulk crystal was grown under terrestrial condition using the same gradient heating furnace (GHF).
Czochralski grown GaSb B single crystal was used as a seed and feed crystals for the growth of InGaSb bulk by: 5. The magnetic field variations induce electric currents in the earth which also produce magnetic fields that contribute to the magnetic disturbances observed at the earth's surface.
Inside the earth, the induced currents act to cancel external magnetic field variations leading to a decrease of the currents and fields with depth. At lowFile Size: 1MB. A magnetic field is the area where other magnetic materials will feel a force. The magnetic field is stronger the closer you are to a magnet or electrical wire.
But don't electric charges in a. Another potential application of the magnetic field microsensors is the monitoring of the corrosion and geometrical defects in ferromagnetic pipeline.
Fig. 16 depicts an inspection platform for oil pipeline walls reported by Nestleroth & Davis (). It is integrated by a rotating permanent magnetic exciter, which may induce uniform eddy Cited by: 6.Full text of "Microgravity Science and Applications.
Program Tasks and Bibliography for FY " See other formats.Figure 1. The EIA applied a growth rate of % in the petroleum production profile with the assumption of R/P=10, which means that the amount of known resources (proven reserves) has 10 years of annual production at the current rate of production to create the three curves in Figure 1.
The peak annual globalFile Size: 2MB.